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TS.Nguyễn Thị Hân

Giảng viên Bộ môn Vật lý

GIỚI THIỆU:

Chức danh: Tiến sĩ 

Email: han.nguyen.dhsptn@gmail.com, nguyenthihan@utehy.edu.vn

Điện thoại: 0984498730

QÚA TRÌNH ĐÀO TẠO:

+ Tiến sĩ: Vật Lý tại Đại học Quốc Gia Thành Công, Đài Loan. Từ 2021-2023

+ Thạc sĩ: Vật Lý tại Đại học Quốc Gia Thành Công, Đài Loan. Từ 2018-2020

+ Thạc sĩ: Hóa học phân tích tại Đại học Sư Phạm, Đại học Thái Nguyên, Việt Nam. Từ 2008-2010.

+ Đại học: Hóa học tại Đại học Sư Phạm, Đại học Thái Nguyên, Việt Nam. Từ 2003-2007.

Địa chỉ liên hệ:

  • Khoái Châu, Hưng Yên, Việt Nam

Lĩnh vực nghiên cứu:

  • + Vật lý tính toán.

    + Vật lí chất rắn.

     + Nghiên cứu các tính chất điện tử, từ tính, quang học, và cấu trúc của vật liệu.

    + Nghiên cứu các chất bán dẫn hai chiều, vật liệu pin mặt trời và những vật liệu mới nổi.

CÁC CÔNG TRÌNH NGHIÊN CỨU TIÊU BIỂU:

1. Nguyen Thi Han, Le, O. K., Ba, D. N., Hue, D. T., Anh, D. P., & Dien, V. K. (2025). Computational investigations of the electronic, magnetic, and optical properties of the Cu-/Fe-transition metals adsorbed on Ge monolayer. Physica E: Low-dimensional Systems and Nanostructures, 116258. (Q2-SCIE).                                          

 2. Nguyen Thi Han, Guerrero-Sanchez, J., & Hoat, D. M. (2025). Band structure and magnetism engineering of InSe monolayers through doping with IVA-and VA-group atoms: role of impurities. Nanoscale Advances. (Q1-SCIE).

 3. Nguyen Thi Han, J. Guerrero-Sanchezb, and  D. M. Hoat. Electronic and magnetic properties of the HfO2 monolayer engineered by doping with transition metals and nonmetal atoms towards spintronic applications. Nanoscale Adv., 2025,7, 320-328 (Q1-SCIE).

4. Nguyen Thi Han, J. Guerrero-Sanchezb and  D. M. Hoat Pnictogen Atom Substitution to Modify the Electronic and Magnetic Properties of SiS2 Monolayer: A DFT Study. Advanced Theory and Simulations, 2400900 (Q1-SCIE).

5. Nguyen Thi Han*, Nguyen Thi Thuy, Dam Nhan Ba (2024). Structural, electronic, and phonon properties of Gallium Sulfide (GaS). Solid State Communications, 115683 (Q2-SCIE).

6. Nguyen Thi Han*, Tu Le Manh, Vo Khuong Dien, (2024), “Electronic, magnetic, and optical properties of Rare-earth metals decorated graphene nanoribbons: DFT study. Nanoscale advances, 2024, 6, 3878-3886 (Q1-SCIE).

7. Nguyen Thanh Tien, Pham Thi Bich Thao, Nguyen Thi Han, Vo Khuong Dien* “Symmetry-driven valleytronics in the single-layer tin chalcogenides SnS and SnSe” Phys. Rev. B 109, 155416 (2024) (Q1-SCIE).

8.  Nguyen Thi Han*, Tu Le Manh, Vo Khuong Dien “First-principles calculations into electronic, and excitonic effects of CH3NH3PbX3 (X= Br, I) perovskite solar cells”, Volume 682, 1 June 2024, 415915, Physica B: Condensed Matter (Q2-SCIE).

 9. Nguyen Thi Han*, Tu Le Manh, Vo Khuong Dien “Direct correlation between electronic and optical properties of the XC monolayers (X= Si, Ge, and Sn) from first-principles calculations”. Volume 159, 2024, 115925 Physica E: Low-dimensional Systems and Nanostructures (Q2-SCIE).

10. Vo Khuong Dien, Pham Thi Bich Thao, Nguyen Thi Han, Nguyen Duy Khanh, Le Vo Phuong Thuan, Ming-Fa Lin, and Nguyen Thanh Tien “Strain controlled electronic transport and exciton radiative lifetime in monolayer germanium sulfide”, Phys. Rev. B 108, 205406, 2023,5 (Q1-R1).

11. Nguyen Thi Han*, Vo Khuong Dien, Tay-Rong Chang & Ming Fa-Lin. Optical excitations of graphene-like materials: group III-nitrides.  Nanoscale Adv., 2023, 5, 5077-5093 (Q1-SCIE).

12. Nguyen Thi Han*, Vo Khuong Dien, Tay-Rong Chang & Ming Fa-Lin. Theoretical investigations of the electronic and optical properties of a GaGeTe monolayer. RSC Adv., 2023,13, 19464-19476 (Q1-SCIE).

13. Vo Khuong Dien, Nguyen Thi Han, Wei Bang-Li, Kuang-I Lin, and Ming-Fa Lin “Tuning of the electronic and optical properties of monolayer GaSe via strain” Adv. Theory Simul. 2023, 2200950. DOI: 10.1002/adts.202200950 (Q1-SCIE).

14. Nguyen Thi Han*, Vo Khuong Dien & Ming Fa-Lin “Electronic and optical properties of CH3NH3SnI3 and CH(NH2)2SnI3 perovskite solar Cell” Phys. Status Solidi RRL, 2023, 2300020. DOI: 10.1002/pssr.202300020. (Q2-SCIE).

15. Vo Khuong Dien, Nguyen Thi Han, Wei-Bang Li, Kuang-I. Lin, and Ming-Fa Lin*. “Correlation between Orbital Hybridizations, Phonon Spectra, and Thermal Properties of Graphene, Germanene, and Plumbene” Phys. Status Solidi RRL, 2023, 2200469. DOI: 10.1002/pssr.202200469 (Q2-SCIE).

16. Vo Khuong Dien, Wei-Bang Li, Kuang-I. Lin, Nguyen Thi Han*, and Ming-Fa Lin* “Electronic and optical properties of graphene, silicene, germanene, and their semi-hydrogenated systems”. RSC Adv., 2022,12, 34851-34865 (Q1-SCIE).

17. Nguyen Thi Han, Vo Khuong Dien & Ming Fa-Lin “First-principles simulation insights of electronic and optical properties: Li6PS5Cl system”. RSC Adv., 2022,12, 32674-32683 (Q1-SCIE).

18. Nguyen Thi Han, Vo Khuong Dien & Ming Fa-Lin “Electronic and Optical Properties of CsGeX3 (X= Cl, Br, and I) Compounds” ACS Omega, 2022, 7, 29, 25210–25218 (Q1-SCIE).

19. Vo Khuong Dien, Nguyen Thi Han*, Wu-Pei Su and Ming-Fa Lin “Spin-dependent Optical Excitations in LiFeO2” ACS Omega, 2021 6 (39), 25664-25671 (Q1-SCIE)

20. Nguyen Thi Han*, Vo Khuong Dien & Ming Fa-Lin*. Excitonic effects in the optical spectra of Li2SiO3 compound. Sci Rep 11, 7683 (2021) (Q1-SCIE).

21. Vo Khuong Dien, Pham, H.D., Tran, N.T.T, Nguyen Thi Han, Ming-Fa Lin “Orbital-hybridization-created optical excitations in Li2GeO3”.  Sci Rep 11, 4939 (2021). (Q1-SCIE)

 22. Vo Khuong Dien, Pham, H.D., Tran, N.T.T, Nguyen Thi Han, Ming-Fa Lin “Orbital-hybridization-created optical excitations in Li2GeO3”.  Sci Rep 11, 4939 (2021). (Q1-SCIE)

23. Vo Khuong Dien, Nguyen Thi Han, Thi Dieu Hien Nguyen, Thi My Duyen Huynh, Hai Duong Pham, Ming-Fa Lin. “Geometric and electronic properties of Li2GeO3 compound” Frontiers in Materials, 2020, 7, 288. (Q2-SCIE).

24. Nguyen Thi Han*, Vo Khuong Dien, Ngoc Thanh Thuy Tran, Duy Khanh Nguyen, Wu-Pei Su, and Ming-Fa Lin*. “First-principles studies of electronic properties in Lithium metasilicate (Li2SiO3). RSC Adv, 2020, 10, 24721 (Q1-SCIE).


SÁCH: 

1. Nguyen Thi Han, Vo Khuong Dien, Ming-Fa Lin “Electronic Properties of Li2S-Si Heterojunction”. DOI:  10.1201/9781003367215-6

2. Nguyen Thi Han, Vo Khuong Dien, Ming-Fa Lin “Comprehensive understanding of electronic and optical properties of Li2SiO3 compound”. DOI: 10.1088/978-0-7503-4685-6ch8.

3. Nguyen Thi Han, Vo Khuong Dien, Ngoc Thanh Thuy Tran, Duy Khanh Nguyen, Ming Fa-Lin 2021. “Diversified properties in 3D ternary oxide compound: Li2SiO3”. https://doi.org/10.1201/9781003138327.                                                                         

4. Nguyen Thi Han, Vo Khuong Dien, Ming-Fa Lin. “Electronic properties of Li2S-Si heterojunction” DOI: 10.1201/9781003367215-6.                                                                    

5. Nguyen Thi Han, Vo Khuong Dien, Ching-Hong Ho, Nguyen Thanh Tien, Phuoc Huu Le, Ming-Fa Lin. “Problems” (Chương 20). https://doi.org/10.1201/9781003322573.

6. Nguyen Thi Han, Vo Khuong Dien, Ming-Fa Lin. “Insight into electronic and optical properties of inorganic Ge-based halide perovskites (CsGeI3)”. Chương 18. DOI:9780443158018.

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